APTGF50DH60T1G

new-10%

Manufacturer part number:APTGF50DH60T1G

Manufacturer:Microsemi Corporation

Description:IGBT MODULE 600V 65A 250W SP1

Case Package:SOT-23

Datasheet:APTGF50DH60T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP1
Number of Pins	12
Published	2012
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	9
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	12
JESD-30 Code	R-XUFM-X9
Qualification Status	Not Qualified
Number of Elements	2
Configuration	Asymmetrical Bridge
Element Configuration	Dual
Case Connection	ISOLATED
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	65A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.1V
Input Capacitance	2.2nF
Turn On Time	52 ns
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 50A
Turn Off Time-Nom (toff)	151 ns
IGBT Type	NPT
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	2.2nF @ 25V
VCEsat-Max	2.45 V
Height	11.5mm
Length	51.6mm
Width	40.8mm
RoHS Status	RoHS Compliant