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APTGF50H60T1G

APTGF50H60T1G

APTGF50H60T1G

Microsemi Corporation

Trans IGBT Module N-CH 600V 65A 12-Pin Case SP-1

SOT-23

APTGF50H60T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 12
Packaging Bulk
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Terminal Position UPPER
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
Qualification Status Not Qualified
Number of Elements 4
Configuration Full Bridge Inverter
Case Connection ISOLATED
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 65A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 2.2nF
Turn On Time 52 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 50A
Turn Off Time-Nom (toff) 151 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 2.2nF @ 25V
VCEsat-Max 2.45 V
RoHS Status RoHS Compliant
Lead Free Lead Free

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