APTGFQ25H120T2G

new-10%

Manufacturer part number:APTGFQ25H120T2G

Manufacturer:Microsemi Corporation

Description:IGBT MODULE 1200V 40A 227W SP2

Case Package:SOT-23

Datasheet:APTGFQ25H120T2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	29 Weeks
Mount	Screw, Through Hole
Mounting Type	Through Hole
Package / Case	SP2
Number of Pins	22
Published	2012
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	227W
Number of Elements	1
Configuration	Full Bridge
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	40A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	2.02nF
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 25A
IGBT Type	NPT and Fieldstop
NTC Thermistor	Yes
Input Capacitance (Cies) @ Vce	2.02nF @ 25V
RoHS Status	RoHS Compliant