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APTGL475A120D3G

APTGL475A120D3G

APTGL475A120D3G

Microsemi Corporation

IGBT MODULE 1200V 610A 2080W D3

SOT-23

APTGL475A120D3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case D-3 Module
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 2.08kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 11
Number of Elements 2
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Turn On Delay Time 200 ns
Power - Max 2080W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Turn-Off Delay Time 400 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 610A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 24.6nF
Turn On Time 270 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 400A
Turn Off Time-Nom (toff) 580 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 24.6nF @ 25V
VCEsat-Max 2.2 V
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $182.23220 $18223.22

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