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APTGT100DA120TG

APTGT100DA120TG

APTGT100DA120TG

Microsemi Corporation

Trans IGBT Module N-CH 1.2KV 140A 20-Pin Case SP-4

SOT-23

APTGT100DA120TG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SP4
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2006
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 480W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
JESD-30 Code R-XUFM-X12
Qualification Status Not Qualified
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 480W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 140A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 7.2nF
Turn On Time 340 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 7.2nF @ 25V
RoHS Status RoHS Compliant

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