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APTGT150DA60TG

APTGT150DA60TG

APTGT150DA60TG

Microsemi Corporation

IGBT MODULE 600V 225A 480W SP4

SOT-23

APTGT150DA60TG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SP4
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 480W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
JESD-30 Code R-XUFM-X12
Qualification Status Not Qualified
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 480W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 225A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 9.2nF
Turn On Time 180 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 150A
Turn Off Time-Nom (toff) 370 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 9.2nF @ 25V
RoHS Status RoHS Compliant

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