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APTGT50DA170T1G

APTGT50DA170T1G

APTGT50DA170T1G

Microsemi Corporation

Trans IGBT Module N-CH 1.7KV 75A 12-Pin Case SP-1

SOT-23

APTGT50DA170T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 1
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation 312W
Terminal Position UPPER
Terminal Form THROUGH-HOLE
Pin Count 12
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 312W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 75A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Input Capacitance 4.4nF
Turn On Time 450 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 50A
Turn Off Time-Nom (toff) 1100 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 4.4nF @ 25V
Radiation Hardening No
RoHS Status RoHS Compliant

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