APTGT50DH120T3G

new-10%

Manufacturer part number:APTGT50DH120T3G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 1.2KV 75A 16-Pin Case SP-3

Case Package:SOT-23

Datasheet:APTGT50DH120T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	16
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	11
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	277W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	25
JESD-30 Code	R-XUFM-X11
Number of Elements	2
Configuration	Asymmetrical Bridge
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	277W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	75A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	3.6nF
Turn On Time	140 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 50A
Turn Off Time-Nom (toff)	610 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	3.6nF @ 25V
VCEsat-Max	2.1 V
Radiation Hardening	No
RoHS Status	RoHS Compliant