APTGT50DU170TG

new-10%

Manufacturer part number:APTGT50DU170TG

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 1.7KV 75A 20-Pin Case SP-4

Case Package:SOT-23

Datasheet:APTGT50DU170TG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SP4
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Published	2006
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	312W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	12
JESD-30 Code	R-XUFM-X12
Qualification Status	Not Qualified
Number of Elements	2
Configuration	Dual, Common Source
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	312W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	75A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	1.7kV
Voltage - Collector Emitter Breakdown (Max)	1700V
Input Capacitance	4.4nF
Turn On Time	450 ns
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 50A
Turn Off Time-Nom (toff)	1100 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	4.4nF @ 25V
RoHS Status	RoHS Compliant