APTM10SKM05TG

new-10%

Manufacturer part number:APTM10SKM05TG

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 100V 278A 20-Pin Case SP-4

Case Package:SOT-23

Datasheet:APTM10SKM05TG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP4
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2012
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	12
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Power Dissipation-Max	780W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	780W
Case Connection	ISOLATED
Turn On Delay Time	80 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5m Ω @ 125A, 10V
Vgs(th) (Max) @ Id	4V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds	20000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	278A Tc
Gate Charge (Qg) (Max) @ Vgs	700nC @ 10V
Rise Time	165ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	135 ns
Turn-Off Delay Time	280 ns
Continuous Drain Current (ID)	278A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.005Ohm
Avalanche Energy Rating (Eas)	3000 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant