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APTM120UM95FAG

APTM120UM95FAG

APTM120UM95FAG

Microsemi Corporation

MOSFET N-CH 1200V 103A SP6

SOT-23

APTM120UM95FAG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code R-PUFM-X2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2272W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 114m Ω @ 51.5A, 10V
Vgs(th) (Max) @ Id 5V @ 15mA
Input Capacitance (Ciss) (Max) @ Vds 30900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 103A Tc
Gate Charge (Qg) (Max) @ Vgs 1122nC @ 10V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 103A
Gate to Source Voltage (Vgs) 30V
Avalanche Energy Rating (Eas) 3000 mJ
RoHS Status RoHS Compliant

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