APTM20UM09SG

new-10%

Manufacturer part number:APTM20UM09SG

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 200V 195A J3

Case Package:SOT-23

Datasheet:APTM20UM09SG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	J3 Module
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2004
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-XUFM-X4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation-Max	780W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9m Ω @ 74.5A, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	12300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	195A Tc
Gate Charge (Qg) (Max) @ Vgs	217nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	195A
Drain-source On Resistance-Max	0.009Ohm
Pulsed Drain Current-Max (IDM)	780A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	1300 mJ
RoHS Status	RoHS Compliant