APTM50DAM35TG

new-10%

Manufacturer part number:APTM50DAM35TG

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 500V 99A 20-Pin Case SP-4

Case Package:SOT-23

Datasheet:APTM50DAM35TG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP4
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2016
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	12
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Power Dissipation-Max	781W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	781W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	39m Ω @ 49.5A, 10V
Vgs(th) (Max) @ Id	5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds	14000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	99A Tc
Gate Charge (Qg) (Max) @ Vgs	280nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	99A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.039Ohm
Pulsed Drain Current-Max (IDM)	396A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	3000 mJ
RoHS Status	RoHS Compliant