APTM50DAM38CTG

new-10%

Manufacturer part number:APTM50DAM38CTG

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 500V 90A 20-Pin Case SP-4

Case Package:SOT-23

Datasheet:APTM50DAM38CTG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP4
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	1997
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	12
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Power Dissipation-Max	694W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	694W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 45A, 10V
Vgs(th) (Max) @ Id	5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds	11200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	90A Tc
Gate Charge (Qg) (Max) @ Vgs	246nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	90A
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	360A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	2500 mJ
RoHS Status	RoHS Compliant