JAN1N5187

new-10%

Manufacturer part number:JAN1N5187

Manufacturer:Microsemi Corporation

Description:DIODE GEN PURP 200V 3A AXIAL

Case Package:SOT-23

Datasheet:JAN1N5187 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 2 weeks ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	B, Axial
Number of Pins	2
Diode Element Material	SILICON
Packaging	Bulk
Series	Military, MIL-PRF-19500/424
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Max Operating Temperature	175°C
Min Operating Temperature	-65°C
HTS Code	8541.10.00.80
Terminal Form	WIRE
Pin Count	2
Qualification Status	Qualified
Number of Elements	1
Element Configuration	Single
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	2μA @ 200V
Voltage - Forward (Vf) (Max) @ If	1.5V @ 9A
Case Connection	ISOLATED
Forward Current	3A
Operating Temperature - Junction	-65°C~175°C
Output Current-Max	3A
Application	FAST RECOVERY POWER
Number of Phases	1
Reverse Recovery Time	200 ns
Peak Reverse Current	2μA
Max Repetitive Reverse Voltage (Vrrm)	200V
Peak Non-Repetitive Surge Current	80A
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant