JAN1N5416US

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Manufacturer part number:JAN1N5416US

Manufacturer:Microsemi Corporation

Description:DIODE GEN PURP 100V 3A AXIAL

Case Package:SOT-23

Datasheet:JAN1N5416US Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Surface Mount, Through Hole
Mounting Type	Through Hole
Package / Case	B, Axial
Number of Pins	2
Diode Element Material	SILICON
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/411
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Max Operating Temperature	175°C
Min Operating Temperature	-65°C
HTS Code	8541.10.00.80
Terminal Position	END
Terminal Form	WRAP AROUND
Pin Count	2
Reference Standard	MIL-19500/411L
Qualification Status	Qualified
Number of Elements	1
Element Configuration	Single
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	1μA @ 100V
Voltage - Forward (Vf) (Max) @ If	1.5V @ 9A
Case Connection	ISOLATED
Operating Temperature - Junction	-65°C~175°C
Output Current-Max	3A
Application	FAST RECOVERY POWER
Max Reverse Voltage (DC)	100V
Average Rectified Current	3A
Number of Phases	1
Reverse Recovery Time	150 ns
Peak Reverse Current	1μA
Max Repetitive Reverse Voltage (Vrrm)	100V
Peak Non-Repetitive Surge Current	80A
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant