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JAN1N6329US

JAN1N6329US

JAN1N6329US

Microsemi Corporation

ZENER DIODE 12Ohm ±5% 16V 50μA @ 12V -65°C~175°C 500mW 2 Terminations SQ-MELF, B

SOT-23

JAN1N6329US Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Contact Plating Lead, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SQ-MELF, B
Number of Pins 2
Diode Element Material SILICON
Operating Temperature -65°C~175°C
Packaging Bulk
Series Military, MIL-PRF-19500/533
Published 1999
Tolerance ±5%
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.10.00.50
Max Power Dissipation 500mW
Terminal Position END
Terminal Form WRAP AROUND
Reach Compliance Code not_compliant
Reference Standard MIL-19500/533F
Qualification Status Qualified
Number of Elements 1
Polarity UNIDIRECTIONAL
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 50μA @ 12V
Voltage - Forward (Vf) (Max) @ If 1.4V @ 1A
Case Connection ISOLATED
Impedance-Max 12Ohm
Reference Voltage 16V
Voltage - Zener (Nom) (Vz) 16V
Zener Voltage 16V
Voltage Tol-Max 5%
Working Test Current 7.8mA
RoHS Status Non-RoHS Compliant
JAN1N6329US Product Details

JAN1N6329US Overview


In order to supply this electrical device, a reverse leakage current of 50μA @ 12V is required.This value (Tol) represents the maximum voltage that can be supplied.Zener (Nom) voltage is reduced to 16V during operation.This device should be operated with 7.8mA as the working test voltage.1.4V @ 1A is achieved when the maximum voltage - Forward (Vf) is applied for its operation.

JAN1N6329US Features


reverse leakage current of 50μA @ 12V
50μA @ 12V is the maximum voltage (Tol)
the working test voltage to 7.8mA
minimal dynamic impedance is 7.8mA


JAN1N6329US Applications


There are a lot of Microsemi Corporation
JAN1N6329US applications of zener single diodes.


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