JAN1N6622US

new-10%

Manufacturer part number:JAN1N6622US

Manufacturer:Microsemi Corporation

Description:DIODE GEN PURP 660V 2A D5A

Case Package:SOT-23

Datasheet:JAN1N6622US Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	32 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating	Lead, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SQ-MELF, A
Diode Element Material	SILICON
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/585
JESD-609 Code	e0
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Additional Feature	HIGH RELIABILITY
HTS Code	8541.10.00.80
Technology	AVALANCHE
Terminal Position	END
Terminal Form	WRAP AROUND
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	2
Reference Standard	MIL-19500
JESD-30 Code	O-LELF-R2
Qualification Status	Qualified
Number of Elements	1
Element Configuration	Single
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	500nA @ 660V
Voltage - Forward (Vf) (Max) @ If	1.4V @ 1.2A
Case Connection	ISOLATED
Forward Current	1.2A
Operating Temperature - Junction	-65°C~150°C
Application	ULTRA FAST RECOVERY
Number of Phases	1
Reverse Recovery Time	30ns
Max Repetitive Reverse Voltage (Vrrm)	660V
Rep Pk Reverse Voltage-Max	600V
Capacitance @ Vr, F	10pF @ 10V 1MHz
Reverse Current-Max	0.5μA
RoHS Status	Non-RoHS Compliant