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JAN1N750DUR-1

JAN1N750DUR-1

JAN1N750DUR-1

Microsemi Corporation

ZENER DIODE 19Ohm ±1% 5μA @ 1.5V -65°C~175°C DO-213AA (Glass)

SOT-23

JAN1N750DUR-1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case DO-213AA (Glass)
Diode Element Material SILICON
Operating Temperature -65°C~175°C
Packaging Bulk
Series Military, MIL-PRF-19500/127
Published 1999
Tolerance ±1%
JESD-609 Code e0
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.10.00.50
Qualification Status Qualified
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 5μA @ 1.5V
Voltage - Forward (Vf) (Max) @ If 1.1V @ 200mA
Power - Max 500mW
Impedance-Max 19Ohm
Voltage - Zener (Nom) (Vz) 4.7V
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $12.32500 $1232.5
JAN1N750DUR-1 Product Details

JAN1N750DUR-1 Overview


In order to supply this electrical device, a reverse leakage current of 5μA @ 1.5V is required.Zener (Nom) voltage is reduced to 4.7V during operation.1.1V @ 200mA is achieved when the maximum voltage - Forward (Vf) is applied for its operation.

JAN1N750DUR-1 Features


reverse leakage current of 5μA @ 1.5V
5μA @ 1.5V is the maximum voltage (Tol)


JAN1N750DUR-1 Applications


There are a lot of Microsemi Corporation
JAN1N750DUR-1 applications of zener single diodes.


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