JAN1N757DUR-1

join

new-10%

Manufacturer part number:JAN1N757DUR-1

Manufacturer:Microsemi Corporation

Description:ZENER DIODE 10Ohm ±1% 1μA @ 7V -65°C~175°C DO-213AA (Glass)

Case Package:SOT-23

Datasheet:JAN1N757DUR-1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	IN PRODUCTION (Last Updated: 3 weeks ago)
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	DO-213AA (Glass)
Diode Element Material	SILICON
Operating Temperature	-65°C~175°C
Packaging	Bulk
Series	Military, MIL-PRF-19500/127
Published	1999
Tolerance	±1%
JESD-609 Code	e0
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
HTS Code	8541.10.00.50
Qualification Status	Qualified
Diode Type	ZENER DIODE
Current - Reverse Leakage @ Vr	1μA @ 7V
Voltage - Forward (Vf) (Max) @ If	1.1V @ 200mA
Power - Max	500mW
Impedance-Max	10Ohm
Voltage - Zener (Nom) (Vz)	9.1V
RoHS Status	Non-RoHS Compliant

Quantity	Unit Price	Ext. Price
100	$12.32500	$1232.5

JAN1N757DUR-1 Overview

The reverse leakage current needed to power this electric device is 1μA @ 7V.As part of the operation, the maximum voltage - Zener (Nom) is reduced to 9.1V.For its operation, the maximum voltage - Forward (Vf) 1.1V @ 200mA is supplied.