JAN2N2218A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N2218A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/251
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.95
Max Power Dissipation
800mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
2
Reference Standard
MIL-19500/251
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Current - Collector (Ic) (Max)
800mA
Collector Base Voltage (VCBO)
75V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$8.310000
$8.31
10
$7.839623
$78.39623
100
$7.395870
$739.587
500
$6.977236
$3488.618
1000
$6.582298
$6582.298
JAN2N2218A Product Details
JAN2N2218A Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Collector current can be as low as 800mA volts at its maximum.
JAN2N2218A Features
the DC current gain for this device is 40 @ 150mA 10V the vce saturation(Max) is 1V @ 50mA, 500mA
JAN2N2218A Applications
There are a lot of Microsemi Corporation JAN2N2218A applications of single BJT transistors.