JAN2N3485A

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JAN2N3485A

Manufacturer part number:JAN2N3485A

Manufacturer:Microsemi Corporation

Description:JAN2N3485A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

Case Package:SOT-23

Datasheet:JAN2N3485A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-206AB, TO-46-3 Metal Can
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-65°C~200°C TJ
Packaging	Bulk
Published	2002
Series	Military, MIL-PRF-19500/392
JESD-609 Code	e0
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
HTS Code	8541.21.00.95
Max Power Dissipation	400mW
Terminal Position	BOTTOM
Terminal Form	WIRE
Pin Count	3
Qualification Status	Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Power - Max	400mW
Transistor Application	SWITCHING
Polarity/Channel Type	PNP
Transistor Type	PNP
Collector Emitter Voltage (VCEO)	60V
Max Collector Current	600mA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA 10V
Current - Collector Cutoff (Max)	10μA ICBO
Vce Saturation (Max) @ Ib, Ic	1.6V @ 50mA, 500mA
Collector Base Voltage (VCBO)	60V
Turn Off Time-Max (toff)	175ns
Turn On Time-Max (ton)	45ns
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant