JAN2N5665 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N5665 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 4 weeks ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-213AA, TO-66-2
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/455
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
2.5W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
2.5W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 5V
Current - Collector Cutoff (Max)
200nA
Vce Saturation (Max) @ Ib, Ic
1V @ 1A, 5A
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
6V
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$32.36710
$3236.71
JAN2N5665 Product Details
JAN2N5665 Overview
In this device, the DC current gain is 25 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 1A, 5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A maximum collector current of 5A volts can be achieved.
JAN2N5665 Features
the DC current gain for this device is 25 @ 1A 5V the vce saturation(Max) is 1V @ 1A, 5A the emitter base voltage is kept at 6V
JAN2N5665 Applications
There are a lot of Microsemi Corporation JAN2N5665 applications of single BJT transistors.