JAN2N5667S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N5667S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/455
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Max Power Dissipation
1.2W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
2
Reference Standard
MIL-19500/455E
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 5V
Current - Collector Cutoff (Max)
200nA
JEDEC-95 Code
TO-5
Vce Saturation (Max) @ Ib, Ic
1V @ 1A, 5A
Current - Collector (Ic) (Max)
5A
Collector Base Voltage (VCBO)
400V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JAN2N5667S Product Details
JAN2N5667S Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1A 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The maximum collector current is 5A volts.
JAN2N5667S Features
the DC current gain for this device is 25 @ 1A 5V the vce saturation(Max) is 1V @ 1A, 5A
JAN2N5667S Applications
There are a lot of Microsemi Corporation JAN2N5667S applications of single BJT transistors.