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JAN2N6308

JAN2N6308

JAN2N6308

Microsemi Corporation

Bipolar Transistors - BJT Power BJT

SOT-23

JAN2N6308 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/498
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Max Power Dissipation 125W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
Reference Standard MIL-19500/498D
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 12 @ 3A 5V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 5V @ 2.67A, 8A
Current - Collector (Ic) (Max) 8A
Collector Base Voltage (VCBO) 700V
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $54.72970 $5472.97

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