JAN2N6766

new-10%

Manufacturer part number:JAN2N6766

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH TO-204AE TO-3

Case Package:SOT-23

Datasheet:JAN2N6766 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Lead, Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-204AE
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/543
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	PIN/PEG
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	2
JESD-30 Code	O-MBFM-P2
Qualification Status	Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	4W Ta 150W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	90m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	115nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.085Ohm
Pulsed Drain Current-Max (IDM)	120A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	500 mJ
RoHS Status	Non-RoHS Compliant