JANS2N5415 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANS2N5415 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
36 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/485
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Max Power Dissipation
750mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Reference Standard
MIL-19500/485H
JESD-30 Code
O-MBCY-W4
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
750mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
200V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
2V @ 5mA, 50mA
Collector Base Voltage (VCBO)
200V
Turn Off Time-Max (toff)
10000ns
Turn On Time-Max (ton)
1000ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANS2N5415 Product Details
JANS2N5415 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 50mA 10V.When VCE saturation is 2V @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
JANS2N5415 Features
the DC current gain for this device is 30 @ 50mA 10V the vce saturation(Max) is 2V @ 5mA, 50mA
JANS2N5415 Applications
There are a lot of Microsemi Corporation JANS2N5415 applications of single BJT transistors.