JANS2N5665 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANS2N5665 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
33 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-213AA, TO-66-2
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/455
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Max Power Dissipation
2.5W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
3
Reference Standard
MIL
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 5V
Current - Collector Cutoff (Max)
200nA
Vce Saturation (Max) @ Ib, Ic
1V @ 1A, 5A
Current - Collector (Ic) (Max)
5A
Collector Base Voltage (VCBO)
400V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$218.85000
$218.85
500
$216.6615
$108330.75
1000
$214.473
$214473
1500
$212.2845
$318426.75
2000
$210.096
$420192
2500
$207.9075
$519768.75
JANS2N5665 Product Details
JANS2N5665 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1A 5V.When VCE saturation is 1V @ 1A, 5A, transistor means Ic has reached transistors maximum value (saturated).The maximum collector current is 5A volts.
JANS2N5665 Features
the DC current gain for this device is 25 @ 1A 5V the vce saturation(Max) is 1V @ 1A, 5A
JANS2N5665 Applications
There are a lot of Microsemi Corporation JANS2N5665 applications of single BJT transistors.