JANS2N5667 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANS2N5667 Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/455
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Max Power Dissipation
1.2W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
2
Reference Standard
MIL-19500/455E
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 5V
Current - Collector Cutoff (Max)
200nA
Vce Saturation (Max) @ Ib, Ic
1V @ 1A, 5A
Current - Collector (Ic) (Max)
5A
Collector Base Voltage (VCBO)
400V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
JANS2N5667 Product Details
JANS2N5667 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 1A 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 1A, 5A.When collector current reaches its maximum, it can reach 5A volts.
JANS2N5667 Features
the DC current gain for this device is 25 @ 1A 5V the vce saturation(Max) is 1V @ 1A, 5A
JANS2N5667 Applications
There are a lot of Microsemi Corporation JANS2N5667 applications of single BJT transistors.