JANTX1N5619

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Manufacturer part number:JANTX1N5619

Manufacturer:Microsemi Corporation

Description:DIODE GEN PURP 600V 1A AXIAL

Case Package:SOT-23

Datasheet:JANTX1N5619 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	32 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 3 weeks ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	A, Axial
Number of Pins	2
Diode Element Material	SILICON
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/429
JESD-609 Code	e0
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
HTS Code	8541.10.00.80
Terminal Form	WIRE
Base Part Number	1N5619
Pin Count	2
Qualification Status	Qualified
Number of Elements	1
Element Configuration	Single
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	500nA @ 600V
Voltage - Forward (Vf) (Max) @ If	1.6V @ 3A
Case Connection	ISOLATED
Operating Temperature - Junction	-65°C~175°C
Output Current-Max	1A
Forward Voltage	1.6V
Max Reverse Voltage (DC)	600V
Average Rectified Current	1A
Reverse Recovery Time	250 ns
Peak Reverse Current	500nA
Max Repetitive Reverse Voltage (Vrrm)	600V
Peak Non-Repetitive Surge Current	30A
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead