JANTX1N6628US

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Manufacturer part number:JANTX1N6628US

Manufacturer:Microsemi Corporation

Description:DIODE GEN PURP 660V 1.75A D5B

Case Package:SOT-23

Datasheet:JANTX1N6628US Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Contact Plating	Lead, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SQ-MELF, E
Diode Element Material	SILICON
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/590
JESD-609 Code	e0
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	TIN LEAD
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Additional Feature	METALLURGICALLY BONDED
HTS Code	8541.10.00.80
Technology	AVALANCHE
Terminal Position	END
Terminal Form	WRAP AROUND
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	2
Reference Standard	MIL-19500/590F
JESD-30 Code	O-LELF-R2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	2μA @ 660V
Voltage - Forward (Vf) (Max) @ If	1.35V @ 2A
Case Connection	ISOLATED
Forward Current	1.75A
Operating Temperature - Junction	-65°C~150°C
Output Current-Max	4A
Application	ULTRA FAST RECOVERY POWER
Max Reverse Voltage (DC)	660V
Average Rectified Current	1.75A
Number of Phases	1
Reverse Recovery Time	30 ns
Max Repetitive Reverse Voltage (Vrrm)	660V
Capacitance @ Vr, F	40pF @ 10V 1MHz
RoHS Status	Non-RoHS Compliant