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JANTX1N757DUR-1

  • JANTX1N757DUR-1
  • JANTX1N757DUR-1

JANTX1N757DUR-1

JANTX1N757DUR-1

Microsemi Corporation

ZENER DIODE 10Ohm ±1% 9.1V 1μA @ 7V -65°C~175°C 480mW DO-213AA (Glass)

SOT-23

JANTX1N757DUR-1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Surface Mount
Package / Case DO-213AA (Glass)
Number of Pins 2
Diode Element Material SILICON
Operating Temperature -65°C~175°C
Packaging Bulk
Series Military, MIL-PRF-19500/127
Published 1999
Tolerance ±1%
JESD-609 Code e0
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.10.00.50
Max Power Dissipation 480mW
Qualification Status Qualified
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 1μA @ 7V
Voltage - Forward (Vf) (Max) @ If 1.1V @ 200mA
Power - Max 500mW
Max Reverse Leakage Current 100nA
Impedance-Max 10Ohm
Zener Voltage 9.1V
Radiation Hardening Yes
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $14.24600 $1424.6
JANTX1N757DUR-1 Product Details

JANTX1N757DUR-1 Overview


An electrical device such as this requires reverse leakage current of 1μA @ 7V.A maximum reverse leakage current is reached at 100nA.As soon as the maximum voltage - Forward (Vf) is supplied, it reaches 1.1V @ 200mA V.

JANTX1N757DUR-1 Features


reverse leakage current of 1μA @ 7V
1μA @ 7V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA


JANTX1N757DUR-1 Applications


There are a lot of Microsemi Corporation
JANTX1N757DUR-1 applications of zener single diodes.


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