JANTX2N2221AUB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTX2N2221AUB Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-SMD, No Lead
Number of Pins
3
Supplier Device Package
UB
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/255
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Power - Max
500mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 10V
Current - Collector Cutoff (Max)
50nA
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
800mA
Collector Base Voltage (VCBO)
75V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$15.27960
$1527.96
JANTX2N2221AUB Product Details
JANTX2N2221AUB Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 10V.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).Supplier device package UB comes with the product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 800mA volts.
JANTX2N2221AUB Features
the DC current gain for this device is 40 @ 150mA 10V the vce saturation(Max) is 1V @ 50mA, 500mA the supplier device package of UB
JANTX2N2221AUB Applications
There are a lot of Microsemi Corporation JANTX2N2221AUB applications of single BJT transistors.