JANTX2N2880 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTX2N2880 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Stud
Mounting Type
Stud Mount
Package / Case
TO-210AA, TO-59-4, Stud
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2004
Series
Military, MIL-PRF-19500/315
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
2W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
2W
Polarity/Channel Type
PNP
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 1A 2V
Current - Collector Cutoff (Max)
20μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500mA, 5A
Collector Base Voltage (VCBO)
110V
Emitter Base Voltage (VEBO)
8V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$171.66800
$17166.8
JANTX2N2880 Product Details
JANTX2N2880 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 1A 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 500mA, 5A.With the emitter base voltage set at 8V, an efficient operation can be achieved.When collector current reaches its maximum, it can reach 5A volts.
JANTX2N2880 Features
the DC current gain for this device is 40 @ 1A 2V the vce saturation(Max) is 1.5V @ 500mA, 5A the emitter base voltage is kept at 8V
JANTX2N2880 Applications
There are a lot of Microsemi Corporation JANTX2N2880 applications of single BJT transistors.