JANTX2N3902 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTX2N3902 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2001
Series
Military, MIL-PRF-19500/371
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
5W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
5W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
3.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 1A 5V
Current - Collector Cutoff (Max)
250μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 700mA, 3.5A
Collector Base Voltage (VCBO)
700V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$44.35200
$4435.2
JANTX2N3902 Product Details
JANTX2N3902 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 1A 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 700mA, 3.5A.The emitter base voltage can be kept at 5V for high efficiency.Maximum collector currents can be below 3.5A volts.
JANTX2N3902 Features
the DC current gain for this device is 30 @ 1A 5V the vce saturation(Max) is 2.5V @ 700mA, 3.5A the emitter base voltage is kept at 5V
JANTX2N3902 Applications
There are a lot of Microsemi Corporation JANTX2N3902 applications of single BJT transistors.