JANTX2N4236 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTX2N4236 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Package / Case
TO-39
Number of Pins
3
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Operating Temperature
125°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Qualification Status
Qualified
Number of Elements
1
Polarity
NPN
Configuration
SINGLE
Power Dissipation
1W
Transistor Application
AMPLIFIER
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
JEDEC-95 Code
TO-205AD
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
7V
DC Current Gain-Min (hFE)
20
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$46.17900
$4617.9
JANTX2N4236 Product Details
JANTX2N4236 Overview
An emitter's base voltage can be kept at 7V to gain high efficiency.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
JANTX2N4236 Features
the emitter base voltage is kept at 7V
JANTX2N4236 Applications
There are a lot of Microsemi Corporation JANTX2N4236 applications of single BJT transistors.