JANTX2N5416 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N5416 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/485
JESD-609 Code
e0
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
750mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Reference Standard
MILITARY STANDARD (USA)
JESD-30 Code
O-MBCY-W4
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
750mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
2V @ 5mA, 50mA
Collector Base Voltage (VCBO)
350V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$10.646000
$10.646
10
$10.043396
$100.43396
100
$9.474902
$947.4902
500
$8.938587
$4469.2935
1000
$8.432629
$8432.629
JANTX2N5416 Product Details
JANTX2N5416 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 50mA 10V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 6V, an efficient operation can be achieved.A maximum collector current of 1A volts can be achieved.
JANTX2N5416 Features
the DC current gain for this device is 30 @ 50mA 10V the vce saturation(Max) is 2V @ 5mA, 50mA the emitter base voltage is kept at 6V
JANTX2N5416 Applications
There are a lot of Microsemi Corporation JANTX2N5416 applications of single BJT transistors.