JANTX2N5662 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N5662 Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/454
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
200V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 500mA 5V
Current - Collector Cutoff (Max)
200nA
Vce Saturation (Max) @ Ib, Ic
800mV @ 400mA, 2A
Collector Base Voltage (VCBO)
250V
Emitter Base Voltage (VEBO)
6V
Turn Off Time-Max (toff)
850ns
Turn On Time-Max (ton)
250ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANTX2N5662 Product Details
JANTX2N5662 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 500mA 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 6V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.
JANTX2N5662 Features
the DC current gain for this device is 40 @ 500mA 5V the vce saturation(Max) is 800mV @ 400mA, 2A the emitter base voltage is kept at 6V
JANTX2N5662 Applications
There are a lot of Microsemi Corporation JANTX2N5662 applications of single BJT transistors.