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JANTX2N6286

JANTX2N6286

JANTX2N6286

Microsemi Corporation

JANTX2N6286 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N6286 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Transistor Element Material SILICON
Operating Temperature -65°C~175°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/505
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Polarity PNP
Element Configuration Single
Case Connection COLLECTOR
Power - Max 175W
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 80V
DC Current Gain (hFE) (Min) @ Ic, Vce 1250 @ 10A 3V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 200mA, 20A
Current - Collector (Ic) (Max) 20A
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 3V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 7V
RoHS Status Non-RoHS Compliant
JANTX2N6286 Product Details

JANTX2N6286 Overview


In this device, the DC current gain is 1250 @ 10A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 3V @ 200mA, 20A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 7V allows for a high level of efficiency.4MHz is present in the transition frequency.

JANTX2N6286 Features


the DC current gain for this device is 1250 @ 10A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz

JANTX2N6286 Applications


There are a lot of Microsemi Corporation JANTX2N6286 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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