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JANTXV1N5532B-1

JANTXV1N5532B-1

JANTXV1N5532B-1

Microsemi Corporation

ZENER DIODE 90Ohm ±5% 12V 50nA @ 10.8V -65°C~175°C 500mW 2 Terminations DO-204AH, DO-35, Axial

SOT-23

JANTXV1N5532B-1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial
Number of Pins 2
Diode Element Material SILICON
Operating Temperature -65°C~175°C
Packaging Bulk
Series Military, MIL-PRF-19500/437
Published 1999
Tolerance ±5%
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional Feature METALLURGICALLY BONDED
HTS Code 8541.10.00.50
Max Power Dissipation 500mW
Terminal Form WIRE
Pin Count 2
Reference Standard MIL-19500
Number of Elements 1
Polarity UNIDIRECTIONAL
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 50nA @ 10.8V
Voltage - Forward (Vf) (Max) @ If 1.1V @ 200mA
Case Connection ISOLATED
Max Reverse Leakage Current 50nA
Impedance-Max 90Ohm
Reference Voltage 12V
Zener Voltage 12V
Voltage Tol-Max 5%
Working Test Current 1mA
Radiation Hardening No
RoHS Status Non-RoHS Compliant
JANTXV1N5532B-1 Product Details

JANTXV1N5532B-1 Overview


The reverse leakage current for this electrical device is 50nA @ 10.8V.Voltage (Tol) 5% is the maximum possible.Reverse leakage currents can reach 50nA.This device should be operated with a 1mA working test voltage.This value reaches 1.1V @ 200mA when the maximum Forward voltage (Vf) is applied.

JANTXV1N5532B-1 Features


reverse leakage current of 50nA @ 10.8V
50nA @ 10.8V is the maximum voltage (Tol)
Reverse leakage current reaches 50nA
the working test voltage to 1mA
minimal dynamic impedance is 1mA


JANTXV1N5532B-1 Applications


There are a lot of Microsemi Corporation
JANTXV1N5532B-1 applications of zener single diodes.


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