JANTXV1N5552US

new-10%

Manufacturer part number:JANTXV1N5552US

Manufacturer:Microsemi Corporation

Description:DIODE GEN PURP 600V 3A B-MELF

Case Package:SOT-23

Datasheet:JANTXV1N5552US Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SQ-MELF, B
Diode Element Material	SILICON
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/420
JESD-609 Code	e0
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin/Lead (Sn/Pb)
Max Operating Temperature	175°C
Min Operating Temperature	-65°C
HTS Code	8541.10.00.80
Terminal Position	END
Terminal Form	WRAP AROUND
Peak Reflow Temperature (Cel)	235
[email protected] Reflow Temperature-Max (s)	20
Reference Standard	MIL-19500/420G
JESD-30 Code	O-LELF-R2
Qualification Status	Qualified
Number of Elements	1
Element Configuration	Single
Speed	Standard Recovery >500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	1μA @ 600V
Voltage - Forward (Vf) (Max) @ If	1.2V @ 9A
Case Connection	ISOLATED
Forward Current	5A
Operating Temperature - Junction	-65°C~175°C
Output Current-Max	3A
Application	POWER
Current - Average Rectified (Io)	3A
Number of Phases	1
Reverse Recovery Time	2 μs
Peak Reverse Current	1μA
Max Repetitive Reverse Voltage (Vrrm)	600V
Peak Non-Repetitive Surge Current	100A
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant