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JANTXV1N5615US

JANTXV1N5615US

JANTXV1N5615US

Microsemi Corporation

DIODE GEN PURP 200V 1A D-5A

SOT-23

JANTXV1N5615US Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SQ-MELF, A
Number of Pins 2
Diode Element Material SILICON
Packaging Bulk
Published 1997
Series Military, MIL-PRF-19500/429
JESD-609 Code e0
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
HTS Code 8541.10.00.80
Technology AVALANCHE
Terminal Position END
Terminal Form WRAP AROUND
Pin Count 2
Qualification Status Qualified
Number of Elements 1
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 500nA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.6V @ 3A
Case Connection ISOLATED
Operating Temperature - Junction -65°C~175°C
Output Current-Max 1A
Current - Average Rectified (Io) 1A
Forward Voltage 1.6V
Reverse Recovery Time 150 ns
Peak Reverse Current 500nA
Max Repetitive Reverse Voltage (Vrrm) 200V
Capacitance @ Vr, F 45pF @ 12V 1MHz
Peak Non-Repetitive Surge Current 30A
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $9.725000 $9.725
10 $9.174528 $91.74528
100 $8.655215 $865.5215
500 $8.165298 $4082.649
1000 $7.703111 $7703.111

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