JANTXV1N5618US

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Manufacturer part number:JANTXV1N5618US

Manufacturer:Microsemi Corporation

Description:DIODE GEN PURP 600V 1A D5A

Case Package:SOT-23

Datasheet:JANTXV1N5618US Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 3 weeks ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SQ-MELF, A
Diode Element Material	SILICON
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/427
JESD-609 Code	e0
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Max Operating Temperature	200°C
Min Operating Temperature	-65°C
Additional Feature	METALLURGICALLY BONDED
HTS Code	8541.10.00.80
Terminal Position	END
Terminal Form	WRAP AROUND
Pin Count	2
Reference Standard	MIL-19500/427K
JESD-30 Code	O-LELF-R2
Qualification Status	Qualified
Number of Elements	1
Element Configuration	Single
Speed	Standard Recovery >500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	500nA @ 600V
Voltage - Forward (Vf) (Max) @ If	1.3V @ 3A
Case Connection	ISOLATED
Operating Temperature - Junction	-65°C~200°C
Output Current-Max	1A
Max Reverse Voltage (DC)	600V
Average Rectified Current	1A
Reverse Recovery Time	2 μs
Peak Reverse Current	500nA
Max Repetitive Reverse Voltage (Vrrm)	600V
Peak Non-Repetitive Surge Current	30A
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant