JANTXV1N5622US

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Manufacturer part number:JANTXV1N5622US

Manufacturer:Microsemi Corporation

Description:DIODE GEN PURP 1KV 1A D5A

Case Package:SOT-23

Datasheet:JANTXV1N5622US Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SQ-MELF, A
Number of Pins	2
Supplier Device Package	D-5A
Packaging	Bulk
Series	Military, MIL-PRF-19500/427
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	200°C
Min Operating Temperature	-65°C
Element Configuration	Single
Speed	Standard Recovery >500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	500nA @ 1000V
Voltage - Forward (Vf) (Max) @ If	1.3V @ 3A
Operating Temperature - Junction	-65°C~200°C
Voltage - DC Reverse (Vr) (Max)	1000V
Current - Average Rectified (Io)	1A
Max Reverse Voltage (DC)	1kV
Average Rectified Current	1A
Reverse Recovery Time	2 μs
Peak Reverse Current	500nA
Max Repetitive Reverse Voltage (Vrrm)	100V
Peak Non-Repetitive Surge Current	30A
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant