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JANTXV1N5802URS

JANTXV1N5802URS

JANTXV1N5802URS

Microsemi Corporation

DIODE GEN PURP 50V 1A APKG

SOT-23

JANTXV1N5802URS Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mounting Type Surface Mount
Package / Case SQ-MELF, A
Surface Mount YES
Diode Element Material SILICON
Packaging Bulk
Published 1997
Series Military, MIL-PRF-19500/477
JESD-609 Code e0
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature HIGH RELIABILITY
HTS Code 8541.10.00.80
Terminal Position END
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) 235
[email protected] Reflow Temperature-Max (s) 20
Pin Count 2
Reference Standard MIL-19500
JESD-30 Code O-LELF-R2
Qualification Status Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 1μA @ 50V
Voltage - Forward (Vf) (Max) @ If 875mV @ 1A
Case Connection ISOLATED
Operating Temperature - Junction -65°C~175°C
Output Current-Max 1A
Voltage - DC Reverse (Vr) (Max) 50V
Current - Average Rectified (Io) 1A
Reverse Recovery Time 25ns
Rep Pk Reverse Voltage-Max 50V
Capacitance @ Vr, F 25pF @ 10V 1MHz
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $27.33400 $2733.4

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