JANTXV1N5804URS

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Manufacturer part number:JANTXV1N5804URS

Manufacturer:Microsemi Corporation

Description:DIODE GEN PURP 100V 1A APKG

Case Package:SOT-23

Datasheet:JANTXV1N5804URS Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mounting Type	Surface Mount
Package / Case	SQ-MELF, A
Surface Mount	YES
Diode Element Material	SILICON
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/477
JESD-609 Code	e0
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	HIGH RELIABILITY
HTS Code	8541.10.00.80
Terminal Position	END
Terminal Form	WRAP AROUND
Peak Reflow Temperature (Cel)	235
[email protected] Reflow Temperature-Max (s)	20
Pin Count	2
Reference Standard	MIL-19500
JESD-30 Code	O-LELF-R2
Qualification Status	Qualified
Operating Temperature (Max)	175°C
Number of Elements	1
Configuration	SINGLE
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	1μA @ 100V
Voltage - Forward (Vf) (Max) @ If	875mV @ 1A
Case Connection	ISOLATED
Operating Temperature - Junction	-65°C~175°C
Output Current-Max	1A
Voltage - DC Reverse (Vr) (Max)	100V
Current - Average Rectified (Io)	1A
Reverse Recovery Time	25ns
Rep Pk Reverse Voltage-Max	100V
Capacitance @ Vr, F	25pF @ 10V 1MHz
RoHS Status	Non-RoHS Compliant