JANTXV1N5807URS

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Manufacturer part number:JANTXV1N5807URS

Manufacturer:Microsemi Corporation

Description:DIODE GEN PURP 50V 3A BPKG

Case Package:SOT-23

Datasheet:JANTXV1N5807URS Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mounting Type	Surface Mount
Package / Case	SQ-MELF, B
Surface Mount	YES
Diode Element Material	SILICON
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/477
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	HIGH RELIABILITY, METALLURGICALLY BONDED
HTS Code	8541.10.00.80
Terminal Position	END
Terminal Form	WRAP AROUND
Pin Count	2
Reference Standard	MIL-19500
JESD-30 Code	O-LELF-R2
Qualification Status	Qualified
Operating Temperature (Max)	175°C
Number of Elements	1
Configuration	SINGLE
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	5μA @ 50V
Voltage - Forward (Vf) (Max) @ If	875mV @ 4A
Case Connection	ISOLATED
Operating Temperature - Junction	-65°C~175°C
Output Current-Max	3A
Application	ULTRA FAST RECOVERY
Voltage - DC Reverse (Vr) (Max)	50V
Current - Average Rectified (Io)	3A
Number of Phases	1
Reverse Recovery Time	30ns
Rep Pk Reverse Voltage-Max	50V
Capacitance @ Vr, F	60pF @ 10V 1MHz
Non-rep Pk Forward Current-Max	125A
RoHS Status	Non-RoHS Compliant