JANTXV1N5807US

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Manufacturer part number:JANTXV1N5807US

Manufacturer:Microsemi Corporation

Description:DIODE GEN PURP 50V 3A D5B

Case Package:SOT-23

Datasheet:JANTXV1N5807US Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SQ-MELF, B
Number of Pins	2
Diode Element Material	SILICON
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/477
JESD-609 Code	e0
Pbfree Code	no
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin/Lead (Sn/Pb)
Max Operating Temperature	175°C
Min Operating Temperature	-65°C
Additional Feature	HIGH RELIABILITY, METALLURGICALLY BONDED
HTS Code	8541.10.00.80
Terminal Position	END
Terminal Form	WRAP AROUND
Pin Count	2
Reference Standard	MIL-19500
Qualification Status	Qualified
Number of Elements	1
Power Dissipation-Max	5W
Element Configuration	Single
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	5μA @ 50V
Voltage - Forward (Vf) (Max) @ If	875mV @ 4A
Case Connection	ISOLATED
Forward Current	6A
Operating Temperature - Junction	-65°C~175°C
Output Current-Max	3A
Application	ULTRA FAST RECOVERY
Max Reverse Voltage (DC)	50V
Average Rectified Current	3A
Number of Phases	1
Reverse Recovery Time	30 ns
Peak Reverse Current	5μA
Max Repetitive Reverse Voltage (Vrrm)	50V
Capacitance @ Vr, F	60pF @ 10V 1MHz
Peak Non-Repetitive Surge Current	125A
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant