JANTXV1N6625US

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Manufacturer part number:JANTXV1N6625US

Manufacturer:Microsemi Corporation

Description:DIODE GEN PURP 1.1KV 1A D5A

Case Package:SOT-23

Datasheet:JANTXV1N6625US Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating	Lead, Tin
Mount	Surface Mount, Through Hole
Mounting Type	Surface Mount
Package / Case	SQ-MELF, A
Number of Pins	2
Diode Element Material	SILICON
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/585
JESD-609 Code	e0
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Additional Feature	HIGH RELIABILITY
HTS Code	8541.10.00.80
Technology	AVALANCHE
Terminal Position	END
Terminal Form	WRAP AROUND
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	2
Reference Standard	MIL-19500
Qualification Status	Qualified
Number of Elements	1
Element Configuration	Single
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	1μA @ 1100V
Voltage - Forward (Vf) (Max) @ If	1.75V @ 1A
Case Connection	ISOLATED
Forward Current	1A
Operating Temperature - Junction	-65°C~150°C
Output Current-Max	1A
Voltage - DC Reverse (Vr) (Max)	1100V
Max Reverse Voltage (DC)	1.1kV
Average Rectified Current	1A
Reverse Recovery Time	60 ns
Max Repetitive Reverse Voltage (Vrrm)	1.1kV
RoHS Status	Non-RoHS Compliant