JANTXV2N3997 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTXV2N3997 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Stud
Mounting Type
Chassis, Stud Mount
Package / Case
TO-111-4, Stud
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/374
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
2W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
4
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
ISOLATED
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1A 2V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
2V @ 500mA, 5A
Current - Collector (Ic) (Max)
10A
Collector Base Voltage (VCBO)
100V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANTXV2N3997 Product Details
JANTXV2N3997 Overview
This device has a DC current gain of 80 @ 1A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In extreme cases, the collector current can be as low as 5A volts.
JANTXV2N3997 Features
the DC current gain for this device is 80 @ 1A 2V the vce saturation(Max) is 2V @ 500mA, 5A
JANTXV2N3997 Applications
There are a lot of Microsemi Corporation JANTXV2N3997 applications of single BJT transistors.